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Thank you for taking an interest in the top-caliber NSN products we feature here on AI NSN Parts. On this page, you can submit a quote request for part number 2N2195B, a Transistor item that is manufactured by On Semiconductor Corporation. Listed alongside the NSN 5961008350390 within our database, part number 2N2195B is conveniently ready for purchase at any time.
To ensure listings like part number 2N2195B are ready for swift installation, we have a rigorous quality assurance program in place. As such, we make it easy for you to inquire about popular NSNs like 5961-00-835-0390, as well as the many other On Semiconductor Corporation products produced under CAGE Code 5V1P1 that interest you. For the benefit of our customers, we carefully vet every entity that we source from, guaranteeing that you only receive superior-caliber offerings in every order. With these dedications, you can always purchase from us with confidence. Furthermore, we also organize our stock based on Federal Supply Classes, so you can find popular items under FSCs like 5961 Semiconductor Devices and Associated Hardware. Do not hesitate to submit the RFQ form below, and within 15 minutes or less of submission, one of our experts will reach out with a customized solution. Get started today and see why so many customers steadily depend on AI NSN Parts for their operational needs.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5961-00-835-0390 Item PartTypeName: TRANSISTOR | 5961 | 008350390 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | U | ||||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 48A50994C01 | 3 | 8 | E |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAV | OVERALL DIAMETER | 0.359 INCHES NOMINAL |
| ALAS | INTERNAL CONFIGURATION | JUNCTION CONTACT |
| ALBA | ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | COLLECTOR |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM BREAKDOWN VOLTAGE,COLLECTOR-TO-BASE,EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE,COLLECTOR-TO-EMITTER,BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE,EMITTER-TO-BASE,COLLECTOR OPEN |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 1.00 AMPERES MAXIMUM COLLECTOR CURRENT,DC |
| CTRD | POWER RATING PER CHARACTERISTIC | 600.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION |
| FEAT | SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |
| TTQY | TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.250 INCHES NOMINAL |
| ABJT | TERMINAL LENGTH | 1.500 INCHES MINIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
| ZZZK | SPECIFICATION/STANDARD DATA | 80131-RELEASE3525 PROFESSIONAL/INDUSTRIAL ASSOCIATION SPECIFICATION |
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