Thank you for taking an interest in the top-caliber NSN products we feature here on AI NSN Parts. On this page, you can submit a quote request for part number TS268EU, a Test Set Semiconduc item that is manufactured by Voron Electronics Corp. Listed alongside the NSN 6625009236534 within our database, part number TS268EU is conveniently ready for purchase at any time.
To ensure listings like part number TS268EU are ready for swift installation, we have a rigorous quality assurance program in place. As such, we make it easy for you to inquire about popular NSNs like 6625-00-923-6534, as well as the many other Voron Electronics Corp products produced under CAGE Code 94518 that interest you. For the benefit of our customers, we carefully vet every entity that we source from, guaranteeing that you only receive superior-caliber offerings in every order. With these dedications, you can always purchase from us with confidence. Furthermore, we also organize our stock based on Federal Supply Classes, so you can find popular items under FSCs like 6625 Electrical and Electronic Properties Measuring and Testing Instruments. Do not hesitate to submit the RFQ form below, and within 15 minutes or less of submission, one of our experts will reach out with a customized solution. Get started today and see why so many customers steadily depend on AI NSN Parts for their operational needs.
MRC | Criteria | Characteristic |
---|---|---|
ABRY | Length | 8.187 INCHES NOMINAL |
MRC | Decoded Requirement | Clear Text Reply |
HGTH | Height | 3.625 INCHES NOMINAL |
AQXZ | Operating Test Capability | FRONT RESISTANCE-NOT GREATER THAN 0.5 KILOHM FOR A GOOD CRYSTAL; BACK RESISTANCE-RATIO OF BACK TO FRONT RESISTANCE GREATER THAN 10 TO 1 FOR A GOOD CRYSTAL; BACK CURRENT-CRYSTAL SHOULD NOT INDICATE CURRENT GREATER THAN - CRYSTAL IN21 AND IN23,IN23A,IN25,IN21A AND IN23B,IN21B,IN26 WE,IN26 SYL,IN78 SYL - CURRENT D. C. 0.400 MA,0.300 MA,0.250 MA,0.175 MA,0.125 MA,0.110 MA,0.230 MA,0.160 MA |
ABGL | Width | 6.000 INCHES NOMINAL |
AQXY | Test Type For Which Designed | FRONT RESISTANCE OF CRYSTAL; BACK RESISTANCE OF CRYSTAL; BACK CURRENT OF CRYSTAL |
ALSF | Internal Battery Accommodation | INCLUDED |
ANPZ | Inclosure Feature | SINGLE ITEM W/CARRYING CASE |
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